| PART |
Description |
Maker |
| D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | TO-202AC
TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | TO-202
TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 2A I(C) | TO-202AC
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 6A条一（c）| TO - 220AB现有
|
Vishay Intertechnology, Inc.
|
| 2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 10A条一（c）|3
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
| JANTXV2N7370 2N7370 JAN2N7370 JANTX2N7370 |
NPN Darlington Transistor
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254AA
|
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-LAWRENCE
|
| BU806 BU807 BU807TU |
NPN Epitaxial Silicon Darlington Transistor
High Voltage & Fast Switching Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| MPSA27-D MPSA27RLRA MPSA27RLRM |
Darlington Transistor NPN Silicon
Small Signal Darlington NPN
|
ON Semiconductor
|
| MMBT6427LT1 MMBT6427LT3 MMBT6427LT1-D MMBT6427LT1G |
Darlington Transistor NPN Silicon
Small Signal Darlington
Darlington Transistor(NPN Silicon)
|
ON Semiconductor
|
| CZTA14 CZTA64 |
SMD Small Signal Transistor NPN Darlington
SMD Small Signal Transistor PNP Darlington
SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
| 2SB1316F5B 2SB1474F5B 2SD2143F5B 2SD2143F5A 2SD214 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | TO-252
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-252
TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 2A I(C) | TO-252 晶体管|晶体管|达林顿|叩| 70V的五（巴西）总裁|甲一（c）|52
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-252
|
Panasonic Industrial Solutions
|
| MPSA28 MPSA28_D ON2340 MPSA29 |
(MPSA28 / MPSA29) Darlington Transistor
Darlington Transistors(NPN Silicon)
CASE 294, STYLE 1 TO2 (TO?26AA)
From old datasheet system
|
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| GMPSA14 |
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| CFD811 |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
